دیتاشیت IXFH86N30T

IXF(H,T)86N30T

مشخصات دیتاشیت

نام دیتاشیت IXF(H,T)86N30T
حجم فایل 186.938 کیلوبایت
نوع فایل pdf
تعداد صفحات 7

دانلود دیتاشیت IXF(H,T)86N30T

IXF(H,T)86N30T Datasheet

مشخصات

  • Manufacturer: IXYS
  • Series: HiPerFET™, TrenchT2™
  • Packaging: Tube
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 300V
  • Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 43mOhm @ 43A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 11300pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 860W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247AD (IXFH)
  • Package / Case: TO-247-3
  • detail: N-Channel 300V 86A (Tc) 860W (Tc) Through Hole TO-247AD (IXFH)